Related Experiment Video
Updated: Aug 5, 2026

10:36
Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Van Hove singularity-driven Hall plateau transitions in Dirac semimetals
Jian Li1,2,3,4, Kai-He Ding1,3,4, Lijun Tang1,3,4
1School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410076, People's Republic of China.
Summary
A van Hove singularity (VHS) splits Landau levels (LLs) in Dirac semimetals, causing irregular quantum Hall plateau transitions. This finding explains observed non-uniform Hall conductivity in experiments.
Area of Science:
- Condensed Matter Physics
- Materials Science
Background:
- The quantum Hall effect (QHE) in Dirac semimetals is sensitive to band structure details.
- Van Hove singularities (VHS) can significantly alter electronic properties.
Purpose of the Study:
- To investigate the influence of VHS on QHE in Dirac semimetals.
- To explain the origin of irregular Hall plateau structures.
Main Methods:
- Analytical calculations using the WKB approximation.
- Numerical simulations of Landau level (LL) spectra.
- Analysis of band structure modifications due to Dirac-cone tilting and spin-orbit coupling.
Main Results:
- A VHS induces Landau level splitting, shifting energies with decreasing VHS energy.
- LL splitting originates from LL crossing of an effective potential barrier.
- Irregular Hall plateau structures arise from LL splitting and finite-size confinement effects.
- Dirac-cone tilting and spin-orbit coupling lead to hole-pocket states and nonmonotonic Hall conductivity.
Conclusions:
- The study provides a theoretical framework for understanding VHS-induced QHE phenomena in Dirac semimetals.
- The findings offer a potential explanation for experimentally observed irregular Hall plateau evolution.
More Related Videos
Related Concept Videos
Valence Bond Theory
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
The Hall Effect
Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
Semiconductors
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Fermi Level
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

