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Published on: March 7, 2018
Lithium-Ion Migration-Induced Magnetic Anisotropy Transition in CoNi Thin Films
Zhen Han1, Senmiao Liu1, Ronghuan Xie2
1Spintronics Institute, University of Jinan, Jinan 250022, China.
Materials (Basel, Switzerland)
|July 28, 2026
Summary
Lithium ion migration in TiO2 layers reversibly controls magnetic anisotropy in spintronic devices. This enables low-voltage operation for magnetic random-access memories by tuning magnetic properties.
Area of Science:
- Spintronics
- Materials Science
- Nanotechnology
Background:
- Voltage control of magnetic anisotropy is crucial for magnetic random-access memories.
- Achieving low-voltage operation and high reversibility is a key challenge.
Purpose of the Study:
- To introduce an ion-conducting layer for low-voltage, reversible magnetic anisotropy control.
- To investigate the role of lithium ion migration in modulating magnetic properties.
Main Methods:
- Fabrication of a Ta/Pt/CoNi heterostructure with an overlying TiO2 layer.
- Utilizing lithium ion migration within TiO2 to induce interfacial electric fields.
- Applying a voltage window (1.5 V) to observe changes in magnetic anisotropy.
Main Results:
- Lithium ion migration into TiO2 induced a reversible shift in magnetic anisotropy from out-of-plane to in-plane.
- Remanent magnetization and coercivity were suppressed to zero within a 1.5 V window.
- Consecutive charge-discharge cycles confirmed the reversibility of magnetic property modulation.
Conclusions:
- Ion migration at magnetic interfaces offers an efficient method for reversible magnetic anisotropy control.
- This approach paves the way for developing low-power spintronic devices.
- The findings are significant for advancing magnetic random-access memory technology.
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