Integration of LASER Diodes Emitting at Eight Different Wavelengths from Blue to Infrared on a 4H-SiC-Based Optical...

We demonstrate an integrated eight-wavelength high-power laser source on a 4H-silicon carbide (SiC)-based optical integration platform. Eight discrete Fabry-Perot laser diodes emitting at 445 nm, 637 nm, 789 nm, 806 nm, 846 nm, 978 nm, 1316 nm, and 1552 nm are integrated on a single SiC chip, each delivering ≥100 mW continuous-wave output power. A complete fabrication process is developed, including lift-off metallization (Ni/Ti/Pt/Au), surface hydrophilic activation bonding, and multi-step blade dicing to form SiC waveguides with a width of 500 μm and a thickness defined by the ~510 μm dicing depth, matching the output aperture of the multimode laser diodes. The resulting waveguides exhibit a facet misorientation of <1° and an approximate facet mean surface roughness of ~2 nm. The laser diodes are directly butted against the waveguide facets for edge coupling, and fixed using In₅₂Sn₄₈ solder bonding with pulse temperature control. Under controlled temperature, all eight channels operate stably with measured peak wavelengths matching the design targets. This work provides a scalable and practical solution for multi-wavelength, high-power on-chip light source integration on the SiC platform, addressing critical thermal and integration challenges for dense wavelength division multiplexing.