From Wide- to Low-Bandgap Semiconductors for Transient Photocurrent THz Emission: A Review

Terahertz (THz) radiation generated through ultrafast transient photocurrent mechanisms has become a cornerstone of modern THz photonics, enabling broadband coherent emission with sub-picosecond temporal resolution. This review provides a comprehensive and mechanism-driven analysis of THz pulse generation via photo-Dember diffusion currents, surface depletion field acceleration, and biased photoconductive antenna architectures. We present a comprehensive comparative analysis of wide- and low-bandgap material platforms, including III-V, II-VI, and group IV semiconductors, as well as two-dimensional materials, topological insulators, and Weyl semimetals, highlighting how their intrinsic properties, such as band structure, carrier mobility, recombination dynamics, doping, and dielectric response, govern their THz emission efficiency, bandwidth, and spectral tunability. Special emphasis is placed on germanium (Ge), which has re-emerged as a highly promising THz source material owing to its high carrier mobility, long diffusion lengths, strain-tunable band structure, and CMOS compatibility. We highlight the roles of doping, strain-induced direct transitions, and several fabrication techniques in controlling the nonlinear photoexcited charge-carrier dynamics in Ge, thereby unlocking enhanced broadband THz performance. Finally, we explore the emerging application prospects of THz radiation, ranging from non-invasive security screening to biochemical sensing and archeological preservation. By bridging fundamental material science with scalable device architectures, this review outlines current challenges, highlights evolving opportunities in novel materials, and charts future directions towards integrated THz technologies.