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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Day-Night Visual Perception Enabled by Vis-NIR Broadband Adaptive Transistors
Zixuan Liu1,2, Weijie Wang1, Yongjie Chen3
1Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.
Abstract:
Broadband adaptive vision is pivotal in enabling robust day-night visual operation in applications like autonomous driving and smart security. However, most existing active perception systems are confined to the visible spectrum regime. Here, we report a Vis-NIR broadband organic active adaptation transistor (VN-OAAT) by incorporating a dielectric embedded with ternary bulk-heterojunction, which simultaneously broadens the spectral response (400-1200 nm) and tunes the charge trapping activation energy. Through precise donor-acceptor compositional engineering, the device exhibits light-intensity-dependent photoresponse that enables photopic adaptation under high-illumination conditions and efficient photodetection in low-light environments, each spanning four orders of magnitude in intensity. Imaging experiments and simulations demonstrate that the device ensures all-day accurate vision with recognition accuracy over 96%. This ternary-heterojunction strategy addresses the intrinsic mismatch between high-performance NIR semiconductors and OAAT, establishing an efficient platform for broadband adaptive sensing in day-night machine vision applications.
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