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Updated: Aug 5, 2026
08:50
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Advances and Challenges in Atomic-Level Growth of Two-Dimensional Single Crystals
Jinzong Kou1,2, Xuping Shi3, Fankai Zeng1,2
1Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, China.
Precision Chemistry
|July 30, 2026
Summary
Atomic-level epitaxial growth enables scalable production of wafer-scale two-dimensional (2D) single crystals for advanced technologies. This review highlights advancements, challenges, and future directions in 2D crystal epitaxy.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) single crystals possess unique electronic, optical, and quantum properties.
- Scalable epitaxial methods are crucial for developing next-generation technologies using 2D materials.
Purpose of the Study:
- To review advancements in atomic-level epitaxy of large-area 2D single crystals.
- To discuss techniques for defect control and stacking order manipulation.
- To outline challenges and future perspectives in 2D crystal integration.
Main Methods:
- Review of atomic-level epitaxial growth techniques.
- Analysis of strategies for single nucleation and heterostructure integration.
- Discussion of defect control and stacking order manipulation.
Main Results:
- Summary of advancements in epitaxy of various 2D materials (conductors, semiconductors, insulators).
- Highlighting strategies for controlled growth, including single nucleation and aligned islands.
- Identification of techniques for defect management and heterostructure assembly.
Conclusions:
- Atomic-level epitaxy is key for wafer-scale 2D single crystals.
- Overcoming challenges like instability and defects is vital for device integration.
- Future work should focus on scalability and defect-free growth for advanced applications.
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