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Updated: Aug 5, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Suppressing Intrinsic Defects via Ag Doping Enables High-Performance InSe Field-Effect Transistors

Zhenhua Wang1, Zheng Zhang1, Hao Ji1

  • 1Institute of Marine Science and Technology, Shandong University, Qingdao, China.

Small Methods
|July 31, 2026
PubMed

Keywords:
Ag dopingInSedefect suppressingfield‐effect transistorintrinsic defect

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