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Suppressing Intrinsic Defects via Ag Doping Enables High-Performance InSe Field-Effect Transistors
Zhenhua Wang1, Zheng Zhang1, Hao Ji1
1Institute of Marine Science and Technology, Shandong University, Qingdao, China.
Small Methods
|July 31, 2026
Summary
Silver doping in Indium Selenide (InSe) enhances its performance for next-generation electronics. This strategy suppresses defects, improving field-effect transistors (FETs) and photodetectors by boosting mobility and responsivity.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Indium Selenide (InSe) shows promise for advanced nanoelectronics due to its unique optoelectronic properties.
- Intrinsic defects in InSe degrade the performance of field-effect transistors (FETs) and photodetectors by causing carrier scattering.
Purpose of the Study:
- To develop a high-performance Ag-doped InSe field-effect transistor (FET).
- To investigate the effect of silver (Ag) doping on the structural and electronic properties of bulk InSe.
Main Methods:
- Efficient Ag doping strategy applied to bulk InSe.
- Detailed material structural characterization to analyze Ag atom incorporation.
- Fabrication and testing of Ag-doped InSe FETs.
Main Results:
- Ag atoms occupy Se vacancies, suppressing Se volatilization and improving InSe crystallinity.
- Enhanced lattice structure leads to suppressed carrier scattering and improved electron transport.
- Ag-InSe FETs exhibit significantly higher field-effect mobility (3-10x) and responsivity (10-1000x) compared to undoped InSe.
Conclusions:
- Ag doping is an effective strategy to suppress defects and enhance the performance of InSe-based devices.
- This approach offers a pathway to improve the electrical and photoelectrical characteristics of two-dimensional (2D) materials.
- The developed Ag-doped InSe FETs represent a significant advancement for nanoelectronic applications.
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