Pure green emission in InP-based QLEDs via ZnSeS interlayer for enhanced electron confinement
1State Key Laboratory of Bioinspired Interfacial Materials Science, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, P. R. China. wen24@ustc.edu.cn.
Nanoscale
|July 31, 2026
Summary
Researchers developed advanced quantum dots (QDs) for vibrant green displays. A novel band-engineering approach enhances electron confinement, significantly reducing spectral shifts and improving device performance for next-generation electronics.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Quantum dot light-emitting diodes (QLEDs) are key for advanced displays.
- Achieving Rec. 2020-compliant green emission is hindered by electron confinement and spectral redshift in InP-based QDs.
Purpose of the Study:
- To overcome limitations in InP-based QDs for efficient green emission.
- To improve electron confinement and reduce field-induced spectral redshift in QLEDs.
Main Methods:
- Implemented a band-engineering strategy using a ZnSeS interlayer in ZnSe/ZnS shells.
- Constructed a stepwise conduction band potential for enhanced electron confinement.
- Fabricated QLED devices and characterized their optical and electrical properties.
Main Results:
- Achieved pure green emission (528 nm) with narrow FWHM (37 nm) and high PLQY (95%).
- QLEDs demonstrated suppressed field-induced redshift (6 nm), high EQE (13.2%), and long operational lifetime (21,683 h).
- Demonstrated scalability with large-area devices (12.8% efficiency) and high-resolution arrays (>8000 PPI).
Conclusions:
- The band-engineering strategy effectively enhances electron confinement and mitigates spectral redshift.
- Developed Cd-free QDs suitable for wide-gamut, high-performance QLED displays.
- Presents a viable route for next-generation near-eye displays and electroluminescent devices.
