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Delicate Management of Alkaline-Substrate-Induced Interfacial Reactions Enables High-Efficiency and Stable Deep-Red
Zhennan Tian1, Jun Wu2, Haifeng Zhao2,3
1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|July 31, 2026
Summary
Researchers developed a magnesium-doped zinc hydroxide substrate to improve all-inorganic cesium lead iodide perovskite light-emitting diodes (PeLEDs). This approach reduces defects and enhances device stability, leading to high-efficiency deep-red PeLEDs.
Area of Science:
- Materials Science
- Optoelectronics
- Solid-State Chemistry
Background:
- All-inorganic CsPbI3 perovskite is promising for deep-red LEDs but suffers from phase transition and defects.
- Alkaline substrate engineering improves perovskite LEDs (PeLEDs), but interfacial reactions are not well understood.
Purpose of the Study:
- To investigate interfacial reactions and develop a stable CsPbI3 perovskite emitter.
- To improve the performance and operational stability of deep-red PeLEDs.
Main Methods:
- Developed a magnesium (Mg)-doped zinc hydroxide (Zn(OH)2) substrate with controlled surface properties.
- Investigated the crystallization and degradation of CsPbI3 films on the modified substrate.
- Analyzed the impact of Mg doping on substrate basicity and interfacial reactions.
Main Results:
- Mg doping reduced oxygen vacancies and surface hydroxyls, decreasing substrate basicity.
- The Mg-doped substrate suppressed organic deprotonation and stabilized CsPbI3 crystallization, reducing defects.
- Interface engineering mitigated degradation under electrical and thermal stress, yielding high-quality emitters.
Conclusions:
- Mg-doped Zn(OH)2 substrates effectively improve CsPbI3 crystallization and stability for PeLEDs.
- This facile interface engineering leads to high-performance deep-red PeLEDs with improved operational lifetime.
- The study provides insights into managing interfacial reactions for advanced perovskite optoelectronics.

