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High-performance GeSn-on-SOI photodetector grown by selective epitaxy for C+L application
Optics Letters
|July 31, 2026
Summary
We developed a high-performance Germanium-Tin (GeSn) photodetector using selective epitaxy on silicon-on-insulator. This advanced fabrication method yields excellent material quality and device performance for integrated photonics.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Germanium-Tin (GeSn) alloys are promising for optoelectronic applications due to their tunable bandgap.
- Fabrication challenges have limited the performance and integration of GeSn-based devices.
- High-performance photodetectors are crucial for optical communication systems.
Purpose of the Study:
- To demonstrate a high-performance GeSn photodetector.
- To utilize selective epitaxial growth for improved material quality and integration.
- To evaluate the optoelectronic properties of the fabricated GeSn photodetector.
Main Methods:
- Fabrication of GeSn photodetector on a silicon-on-insulator (SOI) substrate.
- Employing selective epitaxial growth to confine GeSn material to specific regions.
- Characterization of photodetector responsivity, dark current, and bandwidth.
Main Results:
- Achieved high responsivity of 0.53 A/W at 1550 nm and 0.23 A/W at 1630 nm.
- Demonstrated a low dark current density of 0.35 A/cm².
- Obtained a device bandwidth of 16 GHz.
Conclusions:
- Selective epitaxial growth is an effective method for fabricating high-quality GeSn materials.
- The demonstrated GeSn photodetector exhibits excellent performance metrics.
- GeSn alloys grown by selective epitaxy are suitable for high-performance optoelectronic devices.
