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Tunable morphology-quality synergy in (111) single crystal diamond via coupled process control
Shuai Xu1, Guozhao Ren1, Ke Huang1
1Institute for Advanced Materials and Technology, University of Science and Technology Beijing Beijing 100083 China chengmli@mater.ustb.edu.cn chenliangxianbest@163.com.
RSC Advances
|August 1, 2026
Summary
Optimizing microwave plasma chemical vapor deposition (MPCVD) conditions enhances single-crystal diamond growth. Medium temperatures (861-875 °C) yield superior crystalline quality and reduced stress for electronic devices.
Area of Science:
- Materials Science
- Crystallography
- Chemical Engineering
Background:
- Single-crystal diamond growth is critical for advanced electronic applications.
- Controlling crystal quality and stress is essential for device performance.
Purpose of the Study:
- To investigate the synergistic effects of temperature and methane concentration on (111)-oriented diamond homoepitaxy.
- To establish process windows for high-quality single-crystal diamond growth.
Main Methods:
- Microwave Plasma Chemical Vapor Deposition (MPCVD) was employed.
- Systematic variation of deposition temperature (793-925 °C) and methane concentration (0.5-2.0%).
- Characterization using XRD, Raman spectroscopy, and surface morphology analysis.
Main Results:
- Growth rate increased with temperature and methane concentration, up to 1.73 µm/h.
- Surface morphology evolved from cracks/etch pits to step-flow structures with optimized parameters.
- Optimal crystalline quality and lowest stress were achieved at medium temperatures (861-875 °C).
Conclusions:
- A balance between atomic migration and stress relaxation is key for high-quality (111) diamond epitaxy.
- Identified critical process windows for controlled single-crystal diamond growth.
- Provides theoretical support for fabricating diamond-based electronic devices.
