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Updated: Aug 5, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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Oxygen-vacancy-related defects and interfacial electron transfer in SnO2/WO3 heterojunctions for enhanced NO2

Chuan Luo1, Bingqin Lv2, Cheng Xu2

  • 1Faculty of Information Engineering and Automation, Kunming University of Science and Technology, Kunming 650500, China; Yunnan Key Laboratory of Computer Technology Applications, Kunming 650500, China.

Talanta
|August 1, 2026
PubMed

Keywords:
DFT calculationHeterojunctionLattice distortionNO(2) gas sensorOxygen-vacancy-related defectsSnO(2)/WO(3) nanocomposite

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