Enhanced Brightness Through Rational Design of Hole Transport Layer for Blue Perovskite Light-Emitting Diodes
Lihui Liu1, Yifan Wang1, Guosen Zhang2
1State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, China.
Abstract:
State-of-the-art blue lead-halide perovskite light-emitting diodes (PeLEDs) suffer from low brightness and short lifetime, which constitutes a critical bottleneck for the development of full-color perovskite displays. A major performance bottleneck originates from the considerable hole injection barrier at the interface of hole-transporting layers (HTLs) and blue perovskite emissive layers. To address this, we propose a non-protic interfacial modification strategy, by designing and synthesizing two novel organic small molecules - 9,9-dibutyl-N2,N2,N7,N7-tetrakis(4-methoxyphenyl)-9H-fluorene-2,7-diamine (MPFO) and 9,9-bis(3-(dimethylamino)propyl)-N2,N2,N7,N7-tetrakis(4-methoxyphenyl)-9H-fluorene-2,7-diamine (MPFO-MAP)-to modify the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL. MPFO-MAP, with terminal dimethylamino groups, concurrently reduces the hole-injection barrier, accelerates hole transport, thereby balancing electron and hole current, while passivates PEDOT:PSS/perovskite interfacial defects to enhance radiative recombination. The MPFO-MAP modified blue PeLED achieves a maximum luminance of 8272 cd/m2 and a champion external quantum efficiency of 12.6%, representing 2.9-fold and 3.7-fold improvements over the pristine PEDOT:PSS device, respectively. This dual-function non-protic interfacial engineering strategy provides a versatile molecular design blueprint for high-brightness blue PeLEDs and can be extended to other perovskite-based optoelectronic devices, facilitating their practical application.
More Related Videos
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction


