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Modulated Double-Switching Characteristics in BiFeO3 Films via Anion Engineering
Guoqiang Xi1,2,3, Hangren Li2, Jie Tu2
1College of Electronics and Information Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), Shenzhen University, Shenzhen, China.
Small (Weinheim an Der Bergstrasse, Germany)
|August 3, 2026
Summary
Low-level sulfur incorporation in bismuth ferrite (BiFeO3) thin films creates unique multi-level polarization and double-switching behaviors. This anion engineering approach effectively tunes ferroelectric properties for advanced electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Ferroelectric polarization configurations are crucial for ferroelectric materials.
- These properties are vital for applications in strain response, energy storage, and topological electronics.
Purpose of the Study:
- To investigate the effect of low-level sulfur incorporation on the polarization behavior of BiFeO3 thin films.
- To explore anion engineering as a strategy for tuning ferroelectric properties.
Main Methods:
- Synchrotron-based X-ray diffraction, X-ray absorption spectroscopy, and Raman spectroscopy were used to analyze structural and chemical changes.
- Atomic-resolution spherical-aberration-corrected transmission electron microscopy examined polarization states and domain structures.
Main Results:
- Sulfur incorporation below 3% led to distinct multi-level polarization evolution and double-switching characteristics in BiFeO3 films.
- Anion-triggered chemical stresses induced anisotropic lattice distortion and altered cation-anion coordination.
- Sulfurization regulated polarization states and enhanced domain heterogeneity, remodeling local polarization configurations.
Conclusions:
- Anion engineering via sulfur incorporation is an effective strategy to tailor polarization states in ferroelectric materials.
- The observed modulated double-switching behavior in sulfurized BiFeO3 films highlights the potential of this approach for novel electronic devices.
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