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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Lead-free halide Rb2SnCl6 double perovskite for ultraviolet, water-splitting, and sustainable energy harvesting
Muhammad Bin Javed1, Huda A Alburaih2, Arslan Zulfiqar3
1Department of Physics, University of Sargodha 40100 Sargodha Pakistan safdar.nazir@uos.edu.pk +92-334-9719060.
Abstract:
Beyond traditional ultra-wide bandgap (UWBG) materials such as Ga2O3 and diamond, double perovskites (DP) are an emerging family that can exhibit a bandgap (E g) above 3.4 eV, which is necessary for deep ultra-violet (DUV) applications. In this work, we theoretically studied a lead-free halide Rb2SnCl6 DP that displays a large direct E g of 4.41 eV using a modified Becke-Johnson potential. Further, hydrostatic ([111]) strain modified the E g from 4.18 (-5%) to 4.71 eV (+5%) and shows a strong optical absorption in the DUV region. The absorption coefficient of the unstrained system peaks at 1.27 × 105 cm-1 for 5.51 eV. Moreover, the elastic aspects indicate a transition from ductile metallic-like to brittle covalent-like character with applied strain. Additionally, photocatalytic water-splitting analysis reveals that it has a redox potential with valence bands (3.57 V vs. NHE) more positive than the O2/H2O oxidation potential (1.23 V). Also, their conduction bands (-0.90 vs. NHE) are more negative than the H+/H2 reduction potential (0 V). Also, electron/hole effective mass increases from 0.163 to 0.463/0.359 to 0.808, as the strain varies from -5% to +5%, indicating improved carrier mobility under compressive strain. Concurrently, the static dielectric constant demonstrates changes from 3.41 to 2.255, leading to an increase in the exciton binding energy (E b) from 0.189 to 0.789 eV. Finally, thermoelectric analysis shows a high figure of merit of 0.71/0.70 at 0%/-5% strain at 1200 K, owing to an enhanced power factor and reduced lattice thermal conductivity. Along with this, the Seebeck coefficient remains positive across all strain levels, indicating p-type conduction, while the electrical conductivity improves significantly under compressive strain. Thus, these results establish the system as a promising UWBG semiconductor for DUV, hydrogen production, and sustainable energy harvesting applications.

