Terminal Substitution-Driven Non-Volatile WORM Memory Behavior in Functionalized Fluorenes
Suresh Aswanidev1, Murali Ardra1, Pradhanekar Mohamed Imran2
1Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, India.
Chemistry (Weinheim an Der Bergstrasse, Germany)
|August 6, 2026
Summary
Researchers explored how terminal substituents affect resistive memory devices. Modifying Donor-π-Acceptor/Donor molecules with fluorene cores yielded efficient, solution-processable devices with reliable Write-Once-Read-Many memory characteristics.
Area of Science:
- Materials Science
- Organic Electronics
- Nanotechnology
Background:
- Resistive Random-Access Memory (RRAM) is a promising technology for next-generation data storage.
- Molecular design plays a crucial role in tailoring the performance of organic electronic devices.
Purpose of the Study:
- To investigate the impact of terminal substituents on the resistive memory characteristics of Donor-π-Acceptor/Donor (D-π-A/D) molecules.
- To develop efficient, solution-processable resistive memory devices using fluorene-based D-π-A/D systems.
Main Methods:
- Synthesis of D-π-A/D molecules with fluorene core and styryl π-spacer via Knoevenagel condensation and Suzuki cross-coupling.
- Fabrication and characterization of memory devices using synthesized compounds.
- Photophysical, electrochemical, DFT, SEM, and AFM analyses.
Main Results:
- Synthesized compounds exhibited narrow band gaps (3.02-3.09 eV) and irreversible oxidation.
- All devices demonstrated non-volatile binary Write-Once-Read-Many (WORM) memory with an ON/OFF ratio of 10^3.
- Trifluoromethyl substitution led to a lower threshold voltage (-1.34 V).
- Devices showed improved reliability and reproducibility.
Conclusions:
- Terminal substitution is a viable strategy for optimizing D-π-A/D systems for resistive memory applications.
- The developed fluorene-based molecules offer potential for efficient, solution-processable data storage devices.
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