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Updated: Aug 8, 2026
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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
High-Entropy Flexible Ferroelectric Thin Film with Large Polarization for Nonvolatile Memory
Chengwen Bin1, Xu Hou2,3, Xinghua Zhu4
1School of Integrated Circuits Science and Engineering, Southwest Jiaotong University, Chengdu, Sichuan611756, China.
ACS Applied Materials & Interfaces
|August 6, 2026
Summary
High-entropy ferroelectric thin films offer enhanced performance for flexible electronics. This breakthrough addresses the trade-off between reliability and performance in nonvolatile memory devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Flexible electronics require high-performance nonvolatile memory.
- Conventional ferroelectric films struggle with performance-reliability trade-offs in flexible applications.
Purpose of the Study:
- To develop a high-performance ferroelectric thin film for flexible nonvolatile memory.
- To investigate the impact of entropy engineering on ferroelectric properties.
Main Methods:
- Fabrication of a high-entropy Pb0.9Ba0.1Ti0.25Hf0.25Zr0.25Sn0.25O3 (PBTHZS) ferroelectric thin film on a flexible mica substrate.
- Utilizing entropy engineering with multiple cation solid solutions to induce local structural disorder and lattice distortion.
- Analyzing the effects on electron distribution and macroscopic polarization.
Main Results:
- The PBTHZS thin film demonstrated excellent ferroelectric properties with remnant polarization (Pr) of ~62.2 μC/cm2 and maximum polarization (Pm) of ~131.5 μC/cm2.
- Achieved stable fatigue endurance over 10^8 switching cycles and minimal polarization variation across wide temperature (25-120 °C) and frequency (0.5-10 kHz) ranges.
- Exhibited stable polarization characteristics under various bending conditions.
Conclusions:
- High-entropy engineering effectively enhances polarization performance in ferroelectric nonvolatile memory.
- This approach provides a viable pathway for next-generation flexible electronic devices.
- The developed PBTHZS thin film shows promise for reliable and high-performance flexible memory applications.
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