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Published on: November 24, 2016
Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry
Jingjing Yu1, Teng Li1, Yunhong Lao1
1School of Integrated Circuits, Peking University, Beijing, China.
Science Advances
|August 7, 2026
Summary
Researchers developed a new III-nitride complementary logic (CL) platform using polarization doping. This breakthrough enables efficient p-channel field-effect transistors (FETs) for advanced integrated circuits (ICs).
Area of Science:
- Semiconductor Physics
- Materials Science
- Electrical Engineering
Background:
- Low-efficiency p-type doping hinders wide-bandgap semiconductor adoption in integrated circuits (ICs).
- Inherent polarization effects in III-nitride semiconductors offer an alternative for engineering electrical properties.
Purpose of the Study:
- To demonstrate monolithic integration of polarization-doped III-nitride complementary logic (CL) circuitry.
- To develop efficient p-channel and n-channel field-effect transistors (FETs) for CL applications.
Main Methods:
- Monolithic integration of polarization-doped Indium Gallium Nitride (InGaN) p-channel FETs with Gallium Nitride (GaN) n-channel FETs.
- Fabrication of CL building blocks including inverters, ring oscillators (ROs), NAND, NOR gates, RS latches, and 6T-SRAM.
- Integration of CL buffers with high-voltage GaN power transistors.
Main Results:
- Achieved enhancement-mode (E-mode) InGaN p-FETs with high current density (>20 mA/mm).
- Demonstrated high maximum voltage gain (154.1 V/V) for inverters.
- Obtained a record propagation delay (10.4 ns) per stage for ROs.
Conclusions:
- The polarization-doped III-nitride CL platform is a viable solution for high-frequency power management ICs.
- This technology shows promise for electronics operating in harsh environments.
- Established a foundation for advanced III-nitride based integrated circuits.
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