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Rate-Programmable Interfacial Resistive Switching with Tunable Volatility in CuCrP2S6
Suzanne Lancaster1, Francesco Calavalle2, Mayank Sharma1,3
1CIC NanoGUNE BRTA , 20018Donostia-San Sebastián, Basque Country, Spain.
ACS Applied Materials & Interfaces
|August 9, 2026
Summary
Ionic hopping drives resistive switching in metal thiophosphates, enabling neuromorphic electronics. This study reveals ion dynamics, not ferroelectricity, are key for tunable resistance states and material applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Metal thiophosphates are promising for neuromorphic electronics due to polar phases and ion dynamics.
- Resistive switching in these materials is often linked to ferroelectricity, but ion dynamics' role is unclear.
Purpose of the Study:
- To investigate interfacial resistive switching driven solely by ionic hopping in paraelectric CuCrP2S6.
- To explore the influence of ion dynamics on resistive switching behavior and material properties.
Main Methods:
- Fabrication and electrical characterization of CuCrP2S6 devices.
- Analysis of resistive switching behavior under varying voltage and sweep rates.
- Investigation of electrode effects and solid-state redox activity.
Main Results:
- Demonstrated robust resistive switching in paraelectric CuCrP2S6 without ferroelectricity.
- Observed tunable conductance and controllable volatility dependent on ion dynamics.
- Identified ionic-redox activity involving Cu+ reduction, forming filamentary pathways.
Conclusions:
- Ionic hopping and redox activity are the primary mechanisms for resistive switching in CuCrP2S6.
- Understanding these ionic-redox dynamics is vital for developing dual- or multi-mode neuromorphic devices.
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