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Updated: Aug 10, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Counterintuitive Temperature-Dependent Interfacial Thermal Resistance in Twisted van der Waals Interfaces
Mengjie Li1, Wenwu Jiang2, Huasong Qin3
1Department of Engineering Mechanics, Northwestern Polytechnical University, Xi'an710072, China.
We discovered that twisting layered materials like PtX2 can surprisingly reverse interfacial thermal resistance (ITR) with temperature changes. This twist-temperature control offers a new way to manage heat in van der Waals devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Precise control of interfacial thermal resistance (ITR) is crucial for effective thermal management in van der Waals (vdW) devices.
- Understanding how temperature influences ITR at interfaces is key to optimizing device performance.
Purpose of the Study:
- To investigate the counterintuitive temperature-dependent behavior of ITR in twisted van der Waals heterostructures.
- To explore the underlying mechanisms governing this thermal resistance reversal.
Main Methods:
- Fabrication and characterization of twisted PtX2 (X = S, Se, Te) interfaces.
- Experimental measurement of interfacial thermal resistance at varying temperatures.
- Computational analysis using spectral energy density and spectral heat current.
Main Results:
- A temperature-dependent reversal of ITR was observed in twisted PtX2 interfaces.
- At small twist angles, elevated temperatures increased ITR by enhancing anharmonic scattering and suppressing phonon transmission.
- At large twist angles, elevated temperatures decreased ITR by activating inelastic vibrational pathways.
Conclusions:
- The observed ITR reversal is attributed to a dynamic competition between direct phonon transmission and inelastic scattering pathways.
- This phenomenon is not limited to PtX2 and is applicable to other vdW materials like graphene and MoS2.
- Co-regulation of twist angle and temperature provides an effective strategy for tailoring interfacial thermal transport in vdW materials.
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