Minimal Input, Maximum Insight: Inferring Material Parameters From Solar Cell JV Curves Alone
Cai Williams1, Chen Wang1, Alexander Ehm1
1Institut für Physik, Technische Universität Chemnitz, Chemnitz, Germany.
Abstract:
A key challenge in the development of materials for the next generation of solar cells, sensors and transistors is linking macroscopic device performance to underlying microscopic properties. For years, fabrication of devices has been faster than our ability to characterize them. This has led to a random walk of material development, with new materials being proposed faster than our understanding. We present two neural network-based methods for extracting key material parameters, including charge carrier mobility and trap state density, in optoelectronic devices such as solar cells. Our methods require only a single measured light current-voltage curve and modest computational resources, making our approach applicable in even minimally equipped laboratories. Unlike traditional machine learning models, our methods place the final material values in a non-Gaussian likelihood distribution, allowing confidence assessment of each predicted parameter.We demonstrate these techniques on freshly fabricated PM6:Y12 and PM6:BTP-eC9 organic solar cells, and then track a single PM6:BTP-eC9 device as it degrades in air, recovering the evolution of carrier lifetime, mobility and shunt resistance. This approach enables rapid, low-cost extraction of key material parameters from simple JV measurements alone, providing a practical route to accelerate optimisation of next-generation solar-energy materials and devices.
Related Concept Videos
P-N junction
Maxwell-Boltzmann Distribution: Problem Solving
This distribution function f(v) is defined by saying that the expected number N (v1,v2) of particles with speeds between v1 and v2 is given by
Calibration Curves: Linear Least Squares
For data that follow a straight line, the standard method for fitting is the linear...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Ampere-Maxwell's Law: Problem-Solving
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of the problem,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...


