Related Experiment Video
Updated: Aug 13, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Negative Differential Resistance and Ultrahigh TMR in Altermagnetic Tunnel Junctions
Sajjan Sheoran1, Luke Keenan1, Declan Nell1
1School of Physics and CRANN Institute, Trinity College, Dublin2, Ireland.
Altermagnetic tunnel junctions exhibit unique low-bias negative differential resistance, enabling sign-inverting large tunneling magnetoresistance. This discovery highlights their potential for advanced electronic applications requiring nonlinear responses.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Altermagnets offer advantages over ferromagnets in tunnel junctions, including large tunneling magnetoresistance and ultrafast switching.
- Research has primarily focused on the linear-response regime, with limited exploration of nonlinear behaviors at finite bias.
Purpose of the Study:
- To investigate the nonlinear electronic transport properties of altermagnetic tunnel junctions at finite bias.
- To predict and analyze negative differential resistance in an orbital-ordered altermagnetic material.
Main Methods:
- Density Functional Theory (DFT) calculations.
- Nonequilibrium Green's functions (NEGF) formalism.
- Simulation of current-voltage characteristics in parallel and antiparallel configurations.
Main Results:
- A pronounced low-bias negative differential resistance was predicted in KV2Se2O-based altermagnetic tunnel junctions.
- The observed negative differential resistance is attributed to the altermagnetic quasi-2D Fermi surface of KV2Se2O.
- A large tunneling magnetoresistance with sign inversion at 0.13 V was achieved due to the nonlinear response.
Conclusions:
- Altermagnetic tunnel junctions demonstrate significant nonlinear behavior at finite bias.
- The predicted negative differential resistance and sign-inverting tunneling magnetoresistance validate their potential for low-power, nonlinear electronic devices.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Magnetic Susceptibility and Permeability
When diamagnetic materials are placed under an external magnetic field, the moments opposite to the field are induced. Hence, the susceptibility for diamagnets has a minimal negative value of 10-5–10-6. Since...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

