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Probing the Optical Properties of Size-Selected Liquid-Phase Exfoliated γ-Indium Selenide
Mikhail Kochiev1, Muhammad Ahmad2, Kevin R Synnatschke3
1Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany.
Nanomaterials (Basel, Switzerland)
|August 12, 2026
Summary
Size-selected indium selenide (InSe) nanosheets show size-dependent optical properties and degrade under ambient conditions. These findings offer insights into optimizing InSe for solution-processed optoelectronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals indium selenide (InSe) is a promising material for optoelectronics.
- Its properties are influenced by thickness-dependent band structure and high carrier mobility.
Purpose of the Study:
- Investigate the optical properties of size-selected liquid-phase exfoliated γ-InSe nanosheets.
- Understand the relationship between structure and properties for optoelectronic applications.
Main Methods:
- Size-selected liquid-phase exfoliation of γ-InSe.
- Absorbance spectroscopy to analyze optical properties and determine flake size.
- Photoluminescence spectroscopy to study quantum confinement and disorder effects.
- Stability studies under ambient and elevated temperatures.
Main Results:
- Dispersions of γ-InSe nanosheets (<100 nm lateral dimensions) show structural disorder and size-dependent optical behavior.
- Absorbance spectroscopy enabled quantitative estimation of nanosheet lateral size and layer number.
- Significant degradation of InSe nanosheets was observed under ambient conditions, accelerated by heat.
- Photoluminescence revealed blue-shifted emission for smaller flakes due to quantum confinement and dielectric screening, with disorder contributing to localized states.
Conclusions:
- The study provides crucial structure-property relationships for liquid-phase exfoliated γ-InSe.
- Findings highlight the potential of γ-InSe for solution-processed optoelectronic devices.
- Further research is needed to improve the stability of InSe nanosheets for practical applications.
