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The Synthesis of [Sn10(Si(SiMe3)3)4]2- Using a Metastable Sn(I) Halide Solution Synthesized via a Co-condensation Technique
Published on: November 28, 2016
Competing Sn-O and Sn-C Bond Cleavage Pathways Control Cross-Linking in Tin-Oxo Clusters
Taoli Guo1,2, Chen Zhu3, Lei Zhang4
1College of Elite Engineers, Nankai University, Tianjin300350, China.
The Journal of Physical Chemistry Letters
|August 13, 2026
Summary
Ligand destabilization of tin-oxo cages drives cross-linking in photoresists. This mechanism, involving Sn-O bond cleavage, is crucial for designing advanced materials for extreme ultraviolet lithography.
Area of Science:
- Materials Science
- Nanotechnology
- Photochemistry
Background:
- Tin-oxo clusters exhibit high extreme ultraviolet (EUV) absorption, making them suitable for EUV lithography photoresists.
- The atomic-scale photochemical mechanisms governing their cross-linking behavior are not fully understood.
Purpose of the Study:
- To elucidate the atomistic pathways of cross-linking in tin-oxo clusters.
- To investigate the role of ligand functionalization in controlling photoresist performance.
Main Methods:
- Density functional theory (DFT) calculations.
- Large-scale molecular dynamics (MD) simulations.
- Machine-learning interatomic potentials (MLIPs).
Main Results:
- A novel cross-linking pathway involving Sn-O bond cleavage and cage destabilization was identified.
- Sn-O bond cleavage is as significant as Sn-C bond cleavage in driving cross-linking.
- Ligand identity critically influences cross-linking: vinyl ligands promote extensive network formation, while phenyl ligands suppress it.
Conclusions:
- Framework instability, driven by Sn-O bond cleavage, is a key factor in tin-oxo photoresist cross-linking.
- Ligand design is essential for tuning the cross-linking behavior and optimizing photoresist materials for EUV lithography.
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