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Charge Carrier Dynamics in 6 nm CsPbBr3-Pb4S3Br2 Heterostructured Quantum Dots
Lin Zhang1,2, Simeng Zhao2, Wenxuan Wang1
1State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of New Energy, North China Electric Power University, Beijing102206, China.
None:
Epitaxial CsPbBr3-Pb4S3Br2 heteronanocrystals (HNCs) with coherent interfaces are promising for wave function modulation. Herein, we synthesize 6 nm CsPbBr3-Pb4S3Br2 heterostructured quantum dots (HQDs) in a ZnBr2-stabilized Br--rich system and probe their interfacial charge transfer via steady-state absorption, photoluminescence (PL), time-resolved PL (TRPL) and transient absorption spectroscopy (TAS). Relative to pure CsPbBr3 QDs, the 6 nm HQDs show PL quenching and faster ground-state bleaching (GSB) recovery. Reducing size from 15 nm HNCs to 6 nm HQDs induces a prominent blue shift and weakened amplitude of the GSB signal of Pb4S3Br2 domain, verifying efficient charge carrier spatial separation: electrons are distributed in the CsPbBr3 domain while holes accumulate in the Pb4S3Br2 domain. Benefiting from such separation, photoconductive devices based on 6 nm HQDs achieve photocurrent 3 orders of magnitude higher than pure CsPbBr3 QD devices. This study expands the regulation strategies for CsPbBr3-Pb4S3Br2 heterostructures beyond facet and morphology control.
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