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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
A high-performance resistive humidity sensor based on Nb2CTx/MoS2 heterojunction for non-contact sensing
Yixuan Yang1, Zhenzhen Miao1, Xinglong Liu1
1School of Physical Science and Technology, Xinjiang University, Urumqi, 830017, China.
Abstract:
A Nb2CTx/MoS2 humidity sensor with high sensitivity, low hysteresis, and fast response/recovery for non-contact sensing was prepared. The built-in electric field formed at Nb2CTx/MoS2 heterojunction interface promotes water molecule adsorption and increases the interfacial potential barrier, thus significantly enhancing the response. Meanwhile, the composite possesses a larger specific surface area and abundant hydrophilic functional groups, which provide sufficient active adsorption sites for water molecules and accelerate interfacial electron transfer, reducing response/recovery time and humidity hysteresis of the device. Electrical measurements reveal that within 11-95% RH, the sensor exhibits an ultrahigh sensitivity of 238085 Ω/%RH, a fast response/recovery time of 20.1/4.4 s, and low humidity hysteresis of 5.23%. First-principles calculations confirm that the adsorption energy of water molecules on the heterojunction is about 21 times that on MoS2, providing theoretical support for its superior sensing performance. The sensor enables non-contact detection of human respiration and fingertip distance, offering a feasible strategy for the design of high-performance humidity-sensitive materials.

