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Updated: Aug 16, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Synthesis and theoretical perspectives for nano metal oxide-based semiconductors
Huynh Kim Phung1, Le Phuong Long2, Vo Thi Kien Hao3
1HUTECH University 475A Dien Bien Phu Street, Thanh My Tay Ward, Ho Chi Minh City, Vietnam.
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Increased urbanization and industrialization have led to progress in the field of electronic devices. A marginal transition was also observed in semiconductor devices, which is a subfield of macro-sized materials transitioning to micro-sized particles. Owing to challenges such as limited surface area, low efficiency, and long processing times in macro particles, the role of nanomaterials was well recognized and appreciated by many researchers. Nano-sized metal oxides in semiconductors exhibit excellent properties, including high surface area, quantum confinement effects, tunable band gaps, and high sensitivity, and are used in real-time electronic devices. Hence, this review article provides an overview of nanoparticles, covering their synthesis, properties, and theoretical perspectives. A special focus was placed on density functional theory (DFT) calculations, which aid in understanding the behavior of nanoparticles. Hence, this review article will provide a framework for understanding both the theoretical and experimental perspectives of high-performance nanoparticle-based semiconductors.

