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Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting
Philip Calado1, Ilario Gelmetti2, Benjamin Hilton1
1Department of Physics, Imperial College London, London, SW7 2AZ UK.
None:
The recent emergence of lead-halide perovskites as active layer materials for thin film semiconductor devices including solar cells, light emitting diodes, and memristors has motivated the development of several new drift-diffusion models that include the effects of both electronic and mobile ionic charge carriers. In this work we introduce Driftfusion, a versatile simulation tool built for modelling one-dimensional ordered semiconductor devices with mixed ionic-electronic conducting layers. Driftfusion enables users to model devices with multiple, distinct, material layers using up to four charge carrier species: electrons and holes plus up to two ionic species. The time-dependent carrier continuity equations are coupled to Poisson's equation enabling transient optoelectronic device measurement protocols to be simulated. In addition to material and device-wide properties, users have direct access to adapt the physical models for carrier transport, generation and recombination. Furthermore, a discrete interlayer interface approach circumvents the requirement for boundary conditions at material interfaces and enables interface-specific properties to be introduced.
Supplementary Information:
The online version contains supplementary material available at 10.1007/s10825-021-01827-z.
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