Related Experiment Video
Updated: Aug 23, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Deciphering the Crystallinity-Dependent Sensitivity of Charge Injection in n-Channel Organic Transistors: Reliable
Walid Boukhili1, Chan Zhang2, Jianeng Ma2
1College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, People's Republic of China.
None:
The performance and reliability of n-type organic field-effect transistors (OFETs) are strongly influenced by the interplay between semiconductor crystallinity and the metal/semiconductor interface. Here, we systematically investigate a series of diketopyrrolopyrrole (DPP)-based n-type polymers with identical backbones but varying side-chain architectures, resulting in varied long-range order. By comparing devices fabricated with conventional Au and low-work-function Al/Ti electrodes, we elucidate the synergistic effects of intrinsic polymer crystallinity and interfacial energetics on charge injection, transport, and operational stability. Temperature-dependent electrical measurements and trap analyses demonstrate that contact resistance, rather than intrinsic bulk transport, dominates the observed mobility differences between polymers of moderate and high crystallinity. Optimized Al/Ti contacts mitigate these interfacial limitations, enabling a transition from contact-limited to channel-limited transport and significantly improving environmental and operational stability. These findings establish a quantitative framework linking crystalline order, injection efficiency, and device reliability. This framework provides critical design guidelines for the evaluation and optimization of high-performance n-type organic semiconductors.
Related Concept Videos
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Characteristics of JFET
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

