Ultralow-Loading Anthrone Molecular Semiconductor for Enhancing the Insulation Reliability of Silicone Gel...

Silicone gel (SG) is an important soft encapsulation dielectric for high-voltage power modules, yet its limited insulation performance under high electric fields and elevated temperatures restricts its practical application. Herein, an ultralow loading of the organic molecular semiconductor anthrone (ET) was introduced into silicone gel to simultaneously improve dielectric properties and thermal stability. SG-ET_0.5 exhibited the best overall performance, with a breakdown strength of 29.14 kV/mm at 25 °C, 19.57% higher than that of pristine SG, and retained 22.86 kV/mm at 150 °C with only a 21.56% reduction. The relative permittivity increased to 3.16 and 2.85 at 25 °C and 200 °C, respectively. The partial discharge inception voltage increased from 3.1 to 4.8 kV, while both discharge frequency and amplitude were markedly reduced. Moreover, SG-ET_0.5 showed an increased 5% weight-loss temperature of 370 °C, together with slightly increased thermal conductivity and a reduced coefficient of thermal expansion. Mechanistic analysis suggests that the low-lying LUMO level and molecular characteristics of ET may contribute to the increased deep-trap density and enhanced electron-capturing tendency of the composites, thereby helping to suppress electron avalanche development and partial discharge. This work offers a molecular-level strategy for improving the electrical insulation performance of silicone gel dielectrics for high-voltage power modules.