Related Experiment Video

Updated: Aug 29, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit

Zehan Wu1, Ke Yang1, Wanqing Meng2

  • 1Department of Physics and Materials, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.

Science (New York, N.Y.)
|August 27, 2026
PubMed

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