Related Experiment Video
Updated: Sep 5, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Transparent Topological Meta-Diplexer via Tightly Confined Valley Surface States
Sijie Li1,2, Ping Li3, Zhihao Lan4
1School of Integrated Circuits, Shanghai Jiao Tong University, Shanghai, China.
Abstract:
Topological photonics offers a powerful platform for robust wave manipulation. However, conventional topological devices rely on opaque substrates, limiting their use in applications requiring optical transparency, such as smart windows and transparent electronics. Here, we demonstrate tightly confined valley surface states (VSSs) in an optically transparent topological metasurface platform based on a hollow-snowflake-wire design. The proposed platform simultaneously achieves over 85% visible transparency, deep-subwavelength vertical confinement, and a footprint half that of conventional topological designs. The resulting VSSs exhibit strong robustness against structural discontinuities and high routing flexibility. By tailoring the edge unit cells, we realize a compact topological meta-diplexer with spatially and spectrally separated channels. Communication experiments under 64-QAM modulation confirm robust in-band transmission with error vector magnitude (EVM) and strong inter-channel isolation with EVM for undesired channels. This work establishes an ultrathin transparent topological metasurface platform, paving the way toward integrated and multifunctional topological photonic systems in optically transparent media.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barrier Diode
Induced Electric Dipoles
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...

