Related Experiment Video
Updated: Sep 9, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Room-Temperature Noncollinear Ferroelectricity in van der Waals WO_{2}Cl_{2} with a Wide Bandgap
Yu Xing1, Ning Ding1, Zhipeng Wang2
1Southeast University, Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Nanjing 211189, China.
Abstract:
Low-dimensional ferroelectrics are attractive for their promising prospects in nanoelectronics. Compared with widely used ferroelectric perovskites, most low-dimensional ferroelectrics exhibit several inborn weaknesses such as small bandgaps (mostly <2 eV, i.e., semiconductorslike) or faint polarizations (e.g., <1 μC/cm^{2} for sliding ferroelectrics even if their bandgaps can be large). Here we experimentally demonstrate the room-temperature ferroelectricity of van der Waals WO_{2}Cl_{2}. The well-tested d^{0} rule inherited from ferroelectric perovskites leads to a large dipole (∼3 eÅ) from the off-center displacement of W^{6+} ion and a wide bandgap of 2.80 eV. Its ferroelectricity is proved by multiple characterizations including second harmonic generation, piezoresponse force microscopy, and ferroelectric hysteresis loops. More interestingly, the exotic noncollinear dipole order is directly observed at the atomic level by integrated differential phase contrast scanning transmission electron microscopy. Our Letter paves an alternative route for low-dimensional ferroelectrics to pursue excellent ferroelectric performance and distinct physics of polarity.
Related Concept Videos
Ferromagnetism
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...

