Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors

The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHSs) offers a compelling platform for room temperature control of electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS). We report CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves operating at room temperature. The high CISS-MR is attributed to an interfacial tunneling barrier, modulated by chirality and spin, producing current dissymmetry factors (g_c) that surpass the limit imposed by the Julliere model, which is governed by the intrinsic spin polarization of the adjacent ferromagnetic (FM) contact. The CISS-MR exhibits a dependence on the CMHS composition, revealing structure-property relationships between CISS and structural chirality. The observed exceptionally large tunneling MR response differs from a subtle anisotropic MR arising from the proximity effect at the FM/CMHS interface in the absence of a tunneling barrier. Our study provides insights into charge-to-spin interconversion in chiral semiconductors, offering design principles to control and enhance the CISS response for functional platforms.