Fully reversible electric-field control of magnetization in Fe₃GaTe₂/CuInP₂S₆ heterostructure

Two-dimensional van der Waals magnetic materials offer a promising platform for next-generation spintronic devices, yet achieving fully reversible and low-power voltage control of magnetization switching remains challenging. In this work, a quasi-nonvolatile and fully reversible electrical manipulation of perpendicular magnetic anisotropy is demonstrated in a horizontally-asymmetric Fe₃GaTe₂/CuInP₂S₆ van der Waals heterostructure at room temperature. By leveraging the in-plane migration and accumulation of Cu ions in CuInP₂S₆ under ultralow voltage pulses (0.9 V, ~16.66 kV/m), reversible modulation of the magnetic properties in the adjacent Fe₃GaTe₂ layer is achieved. Anomalous Hall effect and magneto-optical Kerr effect measurements confirm a cyclically stable modulation of the magnetic states, demonstrating a remarkably high voltage-controlled magnetic anisotropy coefficient (~1.0 × 10⁶ fJ/V·m). Furthermore, it is demonstrated that the heterostructure, when integrated with spin-orbit torque devices, enables both voltage-controlled magnetic anisotropy and field-free switching of magnetization. This work provides a viable path toward energy-efficient two-dimensional spintronic devices.