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Published on: August 17, 2018
Twist degree of freedom activated by pressure-driven interlayer engineering in spiral WS2
Penghong Ci1, Muhua Sun2, Yabin Chen3
1State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. ci@semi.ac.cn.
Abstract:
Precise twist-angle control in van der Waals (vdW) moiré superlattices enables twistronic tuning of interfacial responses and emergent quantum states, but it remains unclear how atomic registry in three-dimensional stacks is linked to interlayer coupling and whether it can produce an internal twist degree of freedom without external torque. Here, we show that, via interlayer engineering, screw-dislocation-driven multilayer spiral WS2 exhibits a reversible pressure-induced rotation of second-harmonic-generation polar pattern that saturates near 1 GPa, corresponding to an effective average interlayer twist of 0.2° per layer. This compression-twist coupling arises from moiré defined hierarchy of stacking energies and the associated atomic reconstruction, which together generate a spontaneous rotational torque at a slipped, metastable interface and couple the twist angle to the interlayer spacing. Our findings establish twist-degree-of-freedom manipulation in vdW crystals, opening pathways to reshape correlation-driven behaviors in moiré-of-moiré architectures and to explore chiral elasticity beyond Cauchy continuum mechanics.
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