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Updated: Sep 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
In Situ Single-Atom Decoration of Transition Metal Dichalcogenides by Millisecond Flash Thermal Synthesis Toward High
Euichul Shin1, Jacob Choe1, Wonjun Choi1
1Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea.
Abstract:
Transition metal dichalcogenides (TMD) are attractive for adsorption-driven reactions, yet their activity is strongly site-dependent. Activity is concentrated at edge motifs, whereas most exposed area resides on inert basal planes. Dual-site designs that enrich edges while activating basal planes with catalysts remain challenging to realize without coarsening and metal aggregation during thermal processing. Here, an intense pulsed light-driven flash thermal synthesis route is demonstrated that directly converts ammonium tetrathiomolybdate ((NH4)2MoS4) into few-layer, edge-rich MoS2 nanoflakes (FTS-MoS2) within 10 ms pulse in ambient-air. Ultrafast photothermal shock (1192-1811°C; ∼105/104°C s- 1 heating/cooling rates) suppresses in-plane coarsening and out-of-plane stacking, while Pt, Ir, or Au single atoms are uniformly anchored on MoS2 via rapid metal-sulfur coordination without aggregation. As a proof-of-concept, FTS-MoS2 exhibits a 23.6-fold higher NO2 response at 5 ppm than solvothermally synthesized MoS2. Pt single atom functionalization (FTS-PtSA-MoS2, 1.2 wt%) further boosts the response by 22.8-fold versus pristine FTS-MoS2 and achieves 100.8% response toward 400 ppb NO2 at room temperature. Density functional theory supports enhanced NO2 adsorption and charge transfer on FTS-PtSA-MoS2. With a low electrical energy input (8.6 kJ g-1) and scalable irradiation, ultrafast FTS enables industrially relevant active-site and single-atom engineering in TMDs for high-performance gas sensors.
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