Numerical simulation and performance optimization of InPbI₃ perovskite solar cells

In this study, InPbI₃-based perovskite solar cells were numerically analyzed using the SCAPS-1D simulation tool. The device architecture, FTO/WS₂/InPbI₃/CuI, was modeled and systematically optimized. The investigation focused on the influence of parameters such as the thicknesses of the hole transport layer (HTL), electron transport layer (ETL), and absorber layer, as well as the acceptor dopant concentration in the perovskite, donor dopant concentration in the ETL, interface defect densities, series and shunt resistances, operating temperature, and metal work function on device performance. Following optimization, the solar cell achieved a power conversion efficiency (PCE) of 30.86%, a fill factor (FF) of 83.95%, a short-circuit current density (J_sc) of 37.94 mA/cm², and an open-circuit voltage (V_oc) of 0.9688 V. The attained PCE surpasses previously reported efficiencies for InPbI₃-based perovskite devices, highlighting InPbI₃ as a highly promising material for advancing high-efficiency perovskite photovoltaics.