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Updated: Sep 25, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Dopant-Controlled Lattice Oxygen Stability in Oxide-Derived Cu2O Surface
Priyanka Ghosh1, Biswarup Pathak1
1Department of Chemistry, Indian Institute of Technology Indore, Indore453552, India.
Abstract:
High-index Cu2O surfaces are promising catalysts for CO2 reduction (CO2RR), but their stability under reaction conditions remains a challenge. Here, ab initio molecular dynamics simulations are used to investigate lattice O retention in 3d transition metal (M)-doped oxide-derived high-index Cu2O(200) surfaces. Dopant-dependent O dynamics reveal that O mobility varies with both dopant identity and proximity. Time-resolved bond evolution indicates that early to mid 3d metals form stronger and more stable M-O bonds, while late transition metals exhibit weaker interactions. Consistently, higher O vacancy formation energies for early dopants confirm enhanced lattice O retention and structural stability, whereas late dopants promote O loss and surface reduction. These findings establish key structure-stability relationships and can provide guidance for designing durable Cu2O-based catalysts for CO2RR.

