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Application of Porous Copper-Based Interconnect Materials in Electronic Packaging: A Brief Review
Jiahao Liu1,2, Lijin Qiu1, Peizhong Wang1
1Department of Integrated Circuit, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China.
Abstract:
Driven by the rapid development of deep-space exploration, artificial intelligence, and new energy vehicles, the integration density of power devices has been significantly improved, creating an urgent demand for electronic packaging interconnection materials with low thermal resistance, high reliability, and thermomechanical stress resistance. Porous metals have become a major research focus for packaging interconnection materials owing to their high specific surface area; controllable porous structure; and excellent thermal, electrical, and mechanical properties. Among various porous metals, porous metal has attracted extensive attention in the field of electronic packaging interconnection due to its low cost, high thermal conductivity, superior wettability, and good processability. This paper systematically reviews the research progress of porous copper (Cu)-based interconnection materials in electronic packaging, covering the preparation methods, interconnection methods and reliability of porous Cu-based interconnection materials. In addition, the existing challenges in the preparation, interconnection processes, and reliability evaluation are summarized, which provides clear research directions for the structural optimization and engineering application of such materials in the future.
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