Advanced Electronic Packaging Technologies: A Comparative Review of Architectures, Applications, Reliability

As transistor scaling approaches physical and economic limits, advanced packaging has become an important approach to continued system scaling. This review compares two-dimensional (2D), two- and-a-half-dimensional (2.5D), and three-dimensional (3D) integration technologies, including silicon interposers, localized silicon bridges, redistribution layer (RDL) fan-out platforms, and vertical die stacking. The comparison focuses on interconnect geometry, bandwidth, energy efficiency, thermal and mechanical constraints, manufacturing maturity, cost, and major failure mechanisms. Representative applications in power electronics, high-performance computing (HPC), artificial intelligence (AI), radio frequency (RF) systems, and micro-electromechanical systems (MEMS) are discussed together with their packaging requirements. The relationships between package structure and thermal, mechanical, and electrical reliability are also examined. Emerging technologies, including vertical power delivery, glass substrates, hybrid bonding, and AI-assisted multiphysics design, are further discussed in terms of their role in future heterogeneous integration. Finally, a near-, medium-, and long-term roadmap is presented to summarize the main scaling targets and qualification requirements for larger, denser, and higher-power integrated systems.