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Updated: Oct 3, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Bifunctional Molecular Regulation Couples Halide Homogenization With Deep-Level Defect Control in MA-Free
Cong Sun1,2,3,4,5, Guanlan Chen1,2,3,4,5, Yuan Luo1,2,3,4,5
1Institute of Photoelectronic Thin Film Devices and Technology, Renewable Energy Conversion and Storage Center, State Key Laboratory of Photovoltaic Materials and Cells, Nankai University, Tianjin, P. R. China.
Abstract:
Methylammonium-free (MA-free) wide-bandgap mixed-halide perovskites are highly promising for stable perovskite/silicon tandem solar cells. However, the halide homogenization process readily induces deep-level defects because iodide incorporation into bromide-rich phases is hard to control. Here, we report a bifunctional ammonium salt strategy that achieves sequential defect control during this process. We find that iodide interstitial and antisite incorporation into the perovskite lattice leads to the formation of halide trimer motifs, which constitute a common structural origin of deep-level defects. Our strategy uses 4-(2-aminoethyl)benzenesulfonic acid hydrochloride, where the sulfonic acid group kinetically regulates iodide incorporation within the narrow homogenization window, while the ammonium moiety reconstructs the local atomic configurations of halide trimer motifs, enabling the spontaneous sequential suppression and deactivation of these deep-level defects. This strategy delivers a champion efficiency of 23.81% for MA-free perovskite solar cells and 32.3% for perovskite/silicon tandem devices, which retain over 90% of their initial efficiency after 1000 h of continuous illumination in ambient air. This work advances the understanding and molecular control of deep-level defects arising from halide homogenization in wide-bandgap perovskites.

