Vapor-Deposited Perovskite Photodiodes Integrated on Unconventional Substrates

Lead halide perovskites combine high optical absorption, tunable bandgaps, and long carrier diffusion lengths with simple and low-temperature processing, making them attractive for solid-state photodetectors. To date, most reported perovskite photodiodes have been fabricated in the superstrate (bottom-illumination) configuration, in which light enters the device through a transparent substrate. This geometry precludes direct integration with opaque platforms typical of imaging electronics, such as silicon complementary metal-oxide-semiconductor (CMOS) sensors or printed circuit boards (PCBs), as well as with thin-film transistor (TFT) backplanes, which may combine opaque and transparent regions. Here, we report fully vapor-deposited perovskite photodiodes employing a transparent top electrode prepared by pulsed laser deposition (PLD), enabling integration with both transparent and opaque substrates. Reference devices on glass reach a specific detectivity of 5 × 1012 Jones at -0.5 V and a linear dynamic range approaching 170 dB. We then transfer this architecture to commercial PCBs and show that, upon planarization with a polymer coating, high-performing devices can be grown even on these rough surfaces. Finally, we monolithically integrate a bifacial photodiode onto an TFT readout array and demonstrate a fully functional bifacial imager. Together, these results demonstrate a versatile platform for the integration of perovskite photodetectors onto arbitrary substrates and readout backplanes.