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Updated: Oct 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Temperature-Dependent Charge Transport and Polarization Modulation in P(VDF-TrFE)/IZO Ferroelectric Thin-Film

Chenru Zhao1, Wanyu Zeng1, Shixin Liu1

  • 1State Key Laboratory of Coatings for Advanced Equipment, College of Smart Materials and Future Energy, Fudan University, Shanghai200433, China.

ACS Applied Materials & Interfaces
|October 4, 2026
PubMed

Keywords:
Curie temperatureP(VDF-TrFE)amorphous oxide semiconductorcharge transportferroelectric thin-film transistors

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