High-Detectivity MOCVD-Epitaxial h-BN-Based Vacuum UV Photodetectors With Pt Nanoparticle-Engineered Localized
Zhiwei Gao1, Yufan Wei1, Weijie Liu1
1Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan China.
Abstract:
This study addresses fabrication challenges in hexagonal boron nitride (h-BN)-based vacuum ultraviolet photodetectors (VUV PDs) by implementing platinum nanoparticle (Pt NP)-induced localized surface plasmon resonance (LSPR) effects to enhance photoresponse characteristics. Size-controlled Pt NPs (32 nm, 50 nm, 85 nm) are synthesized on metalorganic chemical vapor deposition (MOCVD)-derived h-BN surfaces through a cost-effective dewetting process, with systematic evaluation under 185 nm VUV irradiation. The 32-nm Pt NP-enhanced device demonstrates optimal performance, achieving 1.02 mA/W responsivity (143% improvement) and 2.95 × 1011 Jones specific detectivity (117% enhancement) at 20 V bias. Numerical simulations confirm that LSPR mechanisms intensify localized electric fields and photon absorption efficiency. This work presents the first LSPR-enhanced h-BN VUV photodetector utilizing Pt nanoparticles (NPs). The proposed design effectively addresses responsivity limitations in two-dimensional material-based detectors. Furthermore, it creates new opportunities for advancing extreme-environment sensing and imaging technologies. The methodology maintains compatibility with scalable MOCVD fabrication processes, with performance improvements directly correlating to precise NP size optimization, suggesting plasmonic engineering as a critical pathway for next-generation optoelectronic devices.
