The challenging path toward high-temperature quantum anomalous Hall effect in MnBi2Te4

Since being theoretically predicted and experimentally confirmed as an intrinsic antiferromagnetic topological insulator in 2019, the MnBi₂Te₄family of materials has greatly propelled the development of condensed matter physics over the past several years. This family naturally integrates long-range magnetic order with topological band structure within a two-dimensional van der Waals layered material, providing an unprecedentedly clean platform for exploring quantum phenomena such as axion insulators, the quantum anomalous Hall effect, and the topological magnetoelectric effect. However, the transition from fundamental research to practical applications, particularly the realization of high-temperature quantum effects, is confronted with severe challenges in intrinsic defects, magnetic ground-state tuning, and electronic structure engineering. This article aims to review the current development status of the MnBi₂Te₄family, focusing on its core quantum phenomena, recent revolutionary breakthroughs in sample preparation techniques, and diverse tuning methods. On this basis, we outline possible pathways toward high-temperature quantum effects through innovations in material synthesis, interface engineering, and multi-strategy tuning and heterostructure engineering.