Related Experiment Video
Updated: Oct 10, 2026

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
Published on: March 21, 2018
Ultrafast anisotropic valleytronics in SnSe
Yiming Pan1, Sotirios Fragkos2, Dominique Descamps2
1Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Kiel, Germany.
Abstract:
Understanding and controlling valley-specific light-matter interactions and non-equilibrium microscopic coupling mechanisms lie at the heart of valleytronics. Due to their strong in-plane anisotropy, which enables polarization-controlled optical transitions to distinct non-degenerate valleys, group-IV monochalcogenides have been recently proposed as promising candidates for next-generation valleytronic materials. However, ultrafast non-equilibrium dynamics following the optical preparation of valley-polarized states have received limited attention in these systems. Here, combining time- and angle-resolved extreme-ultraviolet photoemission spectroscopy with time-dependent Boltzmann equation simulations, we investigate ultrafast valley polarization dynamics following polarization-controlled photoexcitation in SnSe. We show that selective excitation to valleys at global conduction minima yields nearly unity and time-independent valley polarization. By contrast, photoexcitation to the other valley channel leads to ultrafast decay and reversal of valley polarization on subpicosecond timescales due to intervalley scattering mediated by strong electron-phonon coupling with an optical phonon mode. Our findings reveal strongly anisotropic and radically different non-equilibrium valley physics than in most common two-dimensional valleytronics materials.
More Related Videos
Related Concept Videos
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Types of Semiconductors
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

