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Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Evidence for Magnon-Assisted Exciton Radiation in a Layered Antiferromagnetic Semiconductor
Yingchen Peng1, Yanan Ge2, Wentao Chen1
1Xiamen University, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen 361005, People's Republic of China.
Abstract:
Layered van der Waals (vdW) magnetic semiconductors open a new avenue for exploring intertwined excitonic and magnetic phenomena. Here, we investigate this interplay in the vdW antiferromagnet MnPS_{3}, uncovering an exceptionally long exciton lifetime (∼100 μs) below the Néel temperature (T_{N}). We demonstrate that the exciton lifetime is primarily governed by phonon-assisted nonradiative recombination and thus exhibits a strong temperature dependence. In contrast, the exciton radiative recombination shows a distinct temperature dependence that is sensitive to magnetic order. Below T_{N}, the temperature dependence of the radiative recombination rate is consistent with a magnon-assisted emission pathway, while above T_{N} it reflects the combined effects of short-range spin correlations and phonons. These findings not only establish MnPS_{3} as a compelling candidate for excitonic devices due to its long lifetime and correlation with magnetic orders but also provide crucial insights into the interplay between excitons, spins, and lattices in vdW magnetic semiconductors.
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