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Defects, (Sb, Er) Dopant Interactions, and Band Gap Engineering in Cs2AgInCl6 Double Perovskites
Inna A Ivashchenko1, Wojciech Piotrowski2, Marcin Nyk2
1Cracow University of Technology, Faculty of Chemical Engineering and Technology, Warszawska St. 24, Cracow 31-155, Poland.
Abstract:
In this work, the double perovskite Cs2AgInCl6 and its Sb3+- and Er3+-doped powders have been studied to understand how defects and dopants influence optical characteristics. Incomplete AgCl incorporation creates Vk and F centers, as well as defect-related In+ and Ag- states, leading to photoluminescence (PL) bands at approximately 440, 610, and 630 nm, with the dominant peak at 630 nm. Cs2AgInCl6 exhibits a direct band gap of 4.29 eV, which is reduced by chlorine vacancies. Sb3+ doping results in weak PL, whereas Er3+ introduces visible-near-infrared (Vis-NIR) emission (525-1520 nm). Density functional theory (DFT) supports these observations, predicting a direct 4.42 eV gap for Cs2AgInCl6, narrowed by chlorine cation defects (3.3-3.9 eV), Sb3+ (3.41 eV), and Er3+ (3.97 eV) incorporation. Overall, the findings suggest that emission efficiency is limited by complex defect-dopant interactions; however, band gap tuning through doping indicates potential applications for wide-range photodetection.
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