Related Experiment Video
Updated: Oct 18, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Step-Edge Anomaly in Topological Metals
O Schweizer1, V Gali1, A Y Chaou1,2
1Freie Universität Berlin, Dahlem Center for Complex Quantum Systems,Halle-Berlin-Regensburg Cluster of Excellence CCE, and Fachbereich Physik, Arnimallee 14, 14195 Berlin, Germany.
Abstract:
Bulk-boundary correspondence guarantees the presence of robust, anomalous states on the boundary of topological matter. The edges of a two-dimensional Chern insulator harbor one-dimensional chiral states, which have a conductance n e^{2}/h, where n is an integer that is solely determined by the bulk. In this Letter we show that step edges on the surface of three-dimensional topological metals have a robust conductance K e^{2}/h, where K is also fixed by the bulk and assumes noninteger values. We explain this prediction on the basis of the topology of gapless systems, exemplify it on a lattice model, and connect to recent experimental observations of enhanced density of states at step edges in topological metals.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
09:00Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Related Concept Videos
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects